MODELING AND FABRICATION OF P3HT/SWCNT HYBRID NANOSTRUCTURES FOR HIGH-PERFORMANCE OPTOELECTRONIC DEVICES

Authors
  • Abdal Kareem A. Dhahir

    University of Information Technology and Communication, Iraq

    Author

Keywords:
The Poly(3-hexylthiophene), carbon nanotube, DFT, Physical Properties, Nanocomposites.
Abstract

Single-wall carbon nanotubes (SWCNTs) offer outstanding electrical characteristics and are robust but flexible. As a result, they have a widespread range of electrical uses, involving semiconductors, RFID chips, effective field transistors (EFT), smart materials, data storage equipment, and CMOS batteries. Utilizing B3LYP-SDD/DFT (Density Functional Theory), a reduction in absorbance is observed with the incorporation of SWCNT nanocomposites, resulting in a broader absorption spectrum relative to pure P3HT. The incorporation of SWCNTs can extend the absorption spectrum into the near-infrared zone, enabling the solar cell to harness a broader spectrum of sunlight and potentially enhancing total energy conversion efficiency. The decrease in absorbance creates a phenomenon known as “nanotube aggregation”. The Poly(3-hexylthiophene) (P3HT): SWCNTs thin films, which are based on the solution, were prepared using the spin coating technique. UV-visible absorption spectroscopy has been utilized to evaluate the characteristics of nanocomposites. The findings demonstrated that adding SWCNTs to the P3HT matrix reduces absorption intensity without obviously changing the P3HT's band locations. The structural investigation was conducted using XRD, which showed that SWCNTs directly affected the crystallinity of P3HT. Using SEM pictures to investigate the morphological features, it was possible to see that the transparent nanotubes on the P3HT surface were evenly distributed. Uses like light-emitting diodes (LEDs) and photo detectors might benefit from the development of new states of electronics inside P3HT brought about by the inclusion of SWCNTS. This is due to the possibility that the composite material's introduction of a new state of electronics might serve as a means of boosting the LED structure's capacity for charge carriers, such as holes and electrons.

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Published
2026-05-04
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How to Cite

MODELING AND FABRICATION OF P3HT/SWCNT HYBRID NANOSTRUCTURES FOR HIGH-PERFORMANCE OPTOELECTRONIC DEVICES. (2026). Eureka Journal of Geoscience, Materials & Resource Engineering, 2(5), 1-24. https://eurekaoa.com/index.php/9/article/view/934

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